6167LA70DB datasheet

Маркировка

6167LA70DB
Производитель

IDT (Integrated Device Technology)
Описание

IDT (Integrated Device Technology) 6167LA70DB Mfr Package Description: 0.300 INCH, CERAMIC, DIP-20 Technology: CMOS Package Shape: RECTANGULAR Package Style: IN-LINE Terminal Form: THROUGH-HOLE Terminal Finish: TIN LEAD Terminal Position: DUAL Number of Functions: 1 Number of Terminals: 20 Package Body Material: CERAMIC, METAL-SEALED COFIRED Temperature Grade: MILITARY Memory Width: 1 Organization: 16K X 1 Memory Density: 16384 deg Operating Mode: ASYNCHRONOUS Number of Words: 16384 words Number of Words Code: 16K Operating Temperature-Max: 125 Cel Operating Temperature-Min: -55 Cel Supply Voltage-Max (Vsup): 5.5 V Supply Voltage-Min (Vsup): 4.5 V Supply Voltage-Nom (Vsup): 5 V Memory IC Type: STANDARD SRAM Parallel/Serial: PARALLEL Access Time-Max (tACC): 70 ns
Количество страниц

9 шт.
Формат

PDF
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51,90 KB